STMICROELECTRONICS (CROLLES 2) SAS

ELECTRONIC CIRCUIT COMPRISING A RF SWITCHES HAVING REDUCED PARASITIC CAPACITANCES

N° US2025210550A1

LIGHT SENSOR PIXEL AND METHOD OF MANUFACTURING THE SAME

N° US2025185390A1

PIXEL OF A LIGHT SENSOR AND METHOD FOR MANUFACTURING SAME

N° US2025204075A1

IMAGE SENSOR PIXELS HAVING REDUCED PITCH

N° US2025160032A1

SEMICONDUCTOR CHIP MANUFACTURING METHOD

N° US2025126877A1

OPTICAL DEVICE

N° US2025164680A1

WAVEGUIDE OF AN SOI STRUCTURE

N° US2025044627A1

PIXEL WITH GLOBAL SHUTTER

N° US2025039577A1

HYBRID SOURCE FOR GENERATING ENTANGLED PAIRS OF PHOTONS

N° WO2025068417A1

METHOD FOR PRODUCING MOSFET TRANSISTORS INCORPORATING AIR CAVITIES TO REDUCE CAPACITIVE COUPLING IN RADIOFREQUENCY REGIME

N° WO2025056260A1

SPAD PHOTODIODE

N° US2024405146A1

IMAGE SENSOR

N° US2024380999A1

DEVICE AND METHOD FOR CONTINUOUS-TIME ENERGY CALCULATION OF AN ANALOG SIGNAL

N° US2024429934A1

Pixel with an improved quantum efficiency having a micro-lens and a diffractive structure

N° US2024339464A1

IMAGE AND DEPTH PIXEL

N° US2024332324A1

Phase-change memory

N° US2024276894A1

INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH REGION, AND FABRICATING PROCESS

N° US2024274552A1

Image acquisition device

N° US2024204017A1

Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method

N° US2024194815A1

Photodiode comprising a memory area

N° US2024170586A1

IMAGE SENSOR

N° US2024128289A1

DIGITAL TO ANALOG CONVERTER

N° US2024214000A1

ELECTRONIC DEVICE WITH A CELL OF TRANSISTORS

N° US2024213153A1

IMAGE ACQUISITION DEVICE

N° US2024204029A1

VARIABLE-CAPACITANCE DIODE

N° US2024204114A1

IMAGE ACQUISITION DEVICE

N° EP4386850A1

Self-referenced and regulated sensing solution for phase change memory with ovonic threshold switch

N° US2024153557A1

SET OF INTEGRATED STANDARD CELLS

N° US2024105730A1

Switch based on phase change material

N° CN118175919A

Light sensor

N° US2024192053A1

Circuit

N° CN222073124U

TESTING DEVICE

N° US2024183745A1

Radio frequency receiver

N° CN118157697A

RADIO FREQUENCY RECEIVER

N° US2024178869A1

INTEGRATED CIRCUIT INCLUDING A PASSIVE COMPONENT IN AN INTERCONNECTION PART, AND CORRESPONDING MANUFACTURING METHOD

N° US2024178053A1

Method for manufacturing electronic device

N° CN118053808A

INSULATING TRENCH MANUFACTURING

N° US2024178055A1

METHOD OF FABRICATING AN ELECTRONIC DEVICE

N° US2024162186A1

PHASE-CHANGE MEMORY CELL HAVING A COMPACT STRUCTURE

N° US2024081160A1

ASSEMBLY OF INTEGRATED CIRCUIT WAFERS

N° US2024170451A1

TRANSISTOR MANUFACTURING METHOD

N° US2024162328A1

MANUFACTURING METHOD

N° US2024162329A1

SPAD pixel

N° US2024063235A1

MOSFET TRANSISTOR

N° US2024154034A1

Bipolar transistor

N° US2024063290A1

OPTOELECTRONIC DEVICE

N° US2024142806A1

METHOD FOR MANUFACTURING AN ELECTRONIC CHIP COMPRISING A MEMORY CIRCUIT AND ELECTRONIC CHIP COMPRISING A MEMORY CIRCUIT

N° EP4362627A1

METHOD OF FABRICATING AN ELECTRONIC CHIP INCLUDING A MEMORY CIRCUIT

N° US2024147737A1

Read only memory

N° US2024040781A1

HYBRID SOURCE FOR GENERATING ENTANGLED PAIRS OF PHOTONS

N° EP4530714A1

METHOD OF FILLING A TRENCH FORMED IN A SEMICONDUCTOR SUBSTRATE

N° US2024096620A1

Procédé de réalisation de transistors MOSFET intégrant des cavités d’air pour la réduction du couplage capacitif en régime radiofréquence

N° FR3152913A1

IMAGE SENSOR

N° US2023420472A1

Image sensor

N° CN117673104A

Semiconductor device

N° CN221466580U

Transistor, electronic device and radio frequency switch

N° CN221239617U

MOSFET transistor

N° CN117594642A

MOSFET TRANSISTOR

N° US2024063280A1

IMAGE SENSOR WITH PIXEL MATRIX AND MICROLENS MATRIX HAVING DIFFERING PITCHES FROM EACH OTHER

N° US2024030255A1

Optical diffuser and its method of manufacture

N° US2023408738A1

SPAD pixel

N° US2023369359A1

Single photon avalanche diode

N° CN117393571A

Semiconductor device

N° CN220774373U

Optoelectronic component

N° CN221150019U

Single photon avalanche diode

N° CN117393572A

SINGLE PHOTON AVALANCHE DIODE

N° US2024014341A1

SINGLE PHOTON AVALANCHE DIODE

N° US2024014342A1

Silicon-on-insulator semiconductor device with a static random access memory circuit

N° US2024015945A1

METHOD FOR MANUFACTURING HIGH-VOLTAGE TRANSISTORS ON A SILICON-ON-INSULATOR TYPE BULK

N° US2024014215A1

SILICON-ON-INSULATOR SEMICONDUCTOR DEVICE INCLUDING A STATIC RANDOM ACCESS MEMORY CIRCUIT, AND CORRESPONDING MANUFACTURING METHOD

N° EP4304313A1

DEVICE AND METHOD FOR CONTINUOUS-TIME ENERGY CALCULATION OF AN ANALOG SIGNAL

N° EP4482036A1

Electronic device manufacturing method

N° CN117560928A

Electronic device

N° CN220858820U

Strained transistors and phase change memory

N° US2023329008A1

ELECTRONIC DEVICE MANUFACTURING METHOD

N° US2023411450A1

METHOD OF MANUFACTURING ELECTRONIC DEVICES

N° EP4297548A1

Electronic device

N° CN220570922U

Electronic device

N° CN220733372U

Switch based on phase change material

N° CN117425395A

Switch based on phase change material

N° CN117425396A

Lateral bipolar transistor

N° CN117153874A

Lateral bipolar transistor and electronic circuit including same

N° CN220627810U

Semiconductor device of silicon-on-insulator type and corresponding manufacturing method

N° CN117153846A

SEMICONDUCTOR DEVICE OF THE SILICON ON INSULATOR TYPE AND CORRESPONDING MANUFACTURING METHOD

N° US2023387119A1

Electronic chip with two phase change memories

N° US2023309423A1

Image sensor intended to be illuminated via a back side, and corresponding method for acquiring a light flux

N° US2023290801A1

LATERAL BIPOLAR TRANSISTOR

N° EP4287263A1

LATERAL BIPOLAR TRANSISTOR

N° US2023387208A1

TRANSISTOR

N° US2023378295A1

Method of making a capacitive optical modulator

N° US2023280630A1

PN JUNCTION

N° US2023378311A1

METHOD OF MANUFACTURING AN INTERCONNECTION STRUCTURE OF AN INTEGRATED CIRCUIT

N° US2023361064A1

METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICES

N° US2023361241A1

ELECTRICAL CONNECTION AND ITS METHOD OF FABRICATION

N° US2023352513A1

METHOD FOR MANUFACTURING MICROLENSES

N° US2023361151A1

Integrated circuit including metal pillars in contact with silicon regions and corresponding manufacturing method

N° CN117316993A

INTEGRATED CIRCUIT INCLUDING A METAL PILLAR IN CONTACT WITH A SILICON REGION ON AN OHMIC COUPLING REGION, AND CORRESPONDING MANUFACTURING METHOD

N° US2023326947A1

Interconnection structure of an integrated circuit

N° US2023247919A1

Image forming apparatus

N° CN116895669A

Phase modulator device and method

N° US2023236446A1