SOITEC

Method for treating a polycrystalline silicon carbide wafer

N° IL319394A

Method for thinning a composite structure carried by a polycrystalline sic carrier substrate, with reduced warpage

N° IL319395A

METHOD FOR FABRICATING A STRAINED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE

N° US2025239483A1

METHOD FOR MANUFACTURING A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE

N° US2025140603A1

ELASTIC WAVE DEVICE

N° WO2025141199A1

ELASTIC WAVE DEVICE

N° WO2025141201A1

ELASTIC-WAVE DEVICE

N° WO2025141194A1

ELASTIC-WAVE DEVICE WITH PARTIALLY BURIED INTERDIGITATED COMB ELECTRODES

N° WO2025141190A1

ELASTIC-WAVE DEVICE

N° WO2025141195A1

ELASTIC WAVE DEVICE

N° WO2025141196A2

METHOD FOR DIRECTLY BONDING TWO SUBSTRATES

N° WO2025141060A1

METHOD FOR DIRECTLY BONDING TWO SUBSTRATES

N° WO2025140983A1

METHOD FOR DIRECT BONDING BETWEEN TWO SUBSTRATES

N° WO2025140981A1

MANUFACTURING OF A DONOR SUBSTRATE FOR THE MANUFACTURE OF A POI STRUCTURE

N° WO2025132658A1

REFRESHING OF A DONOR SUBSTRATE FOR THE MANUFACTURE OF A POI STRUCTURE

N° WO2025132655A1

MANUFACTURING OF A POI STRUCTURE WITH A HIGHLY UNIFORM PIEZOELECTRIC LAYER

N° WO2025132667A1

METHOD FOR PRODUCING A SUBSTRATE COMPRISING A PLURALITY OF BLOCKS

N° WO2025125417A1

METHOD FOR MANUFACTURING A SUBSTRATE COMPRISING A PLURALITY OF TILES

N° WO2025125420A1

CHIP TRANSFER METHOD

N° WO2025125421A1

BASE STRUCTURE FOR QUANTUM DEVICES AND MANUFACTURING METHOD

N° WO2025125198A1

METHOD FOR PREPARING THIN LAYER OF FERROELECTRIC MATERIAL

N° JP2025019339A

DEVICE ARCHITECTURES WITH TENSILE AND COMPRESSIVE STRAINED SUBSTRATES

N° US2025081561A1

DOUBLE SUPERLATTICES OBTAINED BY LAYER TRANSFER, STRUCTURE AND PRODUCTION METHOD

N° WO2025108891A1

SUPERLATTICE OBTAINED BY LAYER TRANSFER, STRUCTURE AND PRODUCTION METHOD

N° WO2025108893A1

METHOD FOR FABRICATING DOUBLE SUPERLATTICES OBTAINED BY LAYER TRANSFER

N° WO2025108884A1

CARRIER PROVIDED WITH A BRAGG MIRROR, INTENDED FOR TRANSFER OF A LAYER BY LASER SPLITTING

N° WO2025108869A1

METHOD FOR PRODUCING A SOI STRUCTURE, IN PARTICULAR SUITABLE FOR PHOTONIC APPLICATIONS, AND CARRIER SUBSTRATE FOR THE STRUCTURE

N° WO2025108793A1

CARRIER COMPRISING A LAYER FOR TRAPPING ELECTRICAL CHARGES FOR A COMPOSITE SUBSTRATE

N° WO2025153203A1

METHOD FOR MANUFACTURING A HOMOEPITAXIAL SILICON CARBIDE LAYER, MAKING IT POSSIBLE TO LIMIT THE FORMATION OF BPD-TYPE DEFECTS, AND ASSOCIATED COMPOSITE STRUCTURE

N° WO2025103850A1

PROCESS FOR FABRICATING A COMPOSITE STRUCTURE INCLUDING A GRADING STEP

N° WO2025108699A1

FRONT-SIDE-TYPE IMAGE SENSOR

N° US2025072111A1

METHOD FOR CONTROLLING THE QUALITY OF A COMPOSITE STRUCTURE COMPRISING A THIN C-SIC LAYER, AND COMPOSITE STRUCTURE

N° WO2025108696A1

SURFACE ELASTIC WAVE FILTER WITH RESONANT CAVITIES

N° US2025055442A1

SUBSTRATE AND PRODUCTION METHOD THEREFOR FOR PRODUCING A WIDE-BANDGAP BIDIRECTIONAL SWITCH

N° WO2025093586A1

METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER ONTO A SUPPORT SUBSTRATE

N° US2025081852A1

METHOD FOR THINNING THE SURFACE LAYER OF AN SOI SUBSTRATE

N° WO2025103687A1

PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTAL MATERIAL

N° US2025022747A1

ELASTIC WAVE DEVICE

N° WO2025068529A1

Process for treating a silicon carbide substrate

N° TW202513914A

CARRIER COMPRISING A LAYER FOR TRAPPING ELECTRICAL CHARGES FOR A COMPOSITE SUBSTRATE AND METHOD FOR SELECTING SUCH A CARRIER

N° WO2025103654A1

METHOD FOR TREATING A SILICON CARBIDE SUBSTRATE

N° WO2025068410A1

Elastic wave device

N° TW202519103A

SEMICONDUCTOR STRUCTURE BASED ON SILICON CARBIDE FOR POWER APPLICATIONS AND ASSOCIATED FABRICATION PROCESS

N° WO2025073493A1

STRUCTURE FOR A FRONT-FACING IMAGE SENSOR

N° US2025015122A1

METHOD FOR TRANSFERRING BLOCKS FROM A DONOR SUBSTRATE ONTO A RECEIVER SUBSTRATE BY IMPLANTING IONS IN THE DONOR SUBSTRATE THROUGH A MASK, BONDING THE DONOR SUBSTRATE TO THE RECEIVER SUBSTRATE, AND DETACHING THE DONOR

N° US2025022748A1

Semiconductor structure based on silicon carbide for power applications and associated fabrication process

N° TW202516703A

HYBRID STRUCTURE FOR A SURFACE ACOUSTIC WAVE DEVICE

N° US2024397825A1

STRUCTURE COMPRISING A SUPPORT AND HAVING A NON-FLAT SURFACE

N° US2024395601A1

HETEROSTRUCTURE AND METHOD OF FABRICATION

N° US2024396520A1

METHOD FOR MANUFACTURING A DIAMOND SUBSTRATE OR A III-V MATERIAL SUBSTRATE FOR MICROELECTRONIC APPLICATIONS

N° WO2025026981A1

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SUBSTRATE AND SUBSTRATE FOR THE EPITAXIAL GROWTH OF MONOCRYSTALLINE LAYERS OF ALN MATERIAL

N° US2024384432A1

TRANSDUCER STRUCTURE FOR SINGLE PORT RESONATOR IN WHICH LATERAL MODE IS SUPPRESSED

N° JP2024152739A

METHOD FOR PRODUCING AN ADVANCED SUBSTRATE FOR HYBRID INTEGRATION

N° US2024379410A1

DETACHABLE SEMICONDUCTOR SUBSTRATE MADE OF POLYCRYSTALLINE SILICON CARBIDE

N° WO2025026895A1

METHOD FOR MANUFACTURING SUBSTRATE FOR HIGH-FREQUENCY DEVICE

N° JP2024128100A

Resonant cavity surface acoustic wave (SAW) filters

N° US2024348234A1

METHOD FOR PRODUCING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER ONTO A SUPPORT SUBSTRATE

N° WO2025003091A1

Process for fabricating a donor substrate for the transfer of a piezoelectric layer to a carrier substrate

N° TW202519102A

Polycrystalline silicon carbide support for a substrate intended to receive power semiconductor devices and substrate comprising such a support

N° TW202518686A

Gate all around semiconductor structure and its method of preparation

N° TW202505774A

GATE ALL AROUND SEMICONDUCTOR STRUCTURE AND ITS METHOD OF PREPARATION

N° WO2025021364A1

POLYCRYSTALLINE SILICON CARBIDE CARRIER FOR A SUBSTRATE INTENDED TO ACCOMMODATE POWER SEMICONDUCTOR DEVICES AND SUBSTRATE COMPRISING SUCH A CARRIER

N° WO2025002734A1

PROCESS FOR DOUBLE LAYER TRANSFER

N° WO2024240636A1

Process for fabricating a plurality of polycrystalline silicon carbide substrates

N° TW202515363A

METHOD FOR MANUFACTURING A PLURALITY OF POLYCRYSTALLINE SILICON CARBIDE SUBSTRATES

N° WO2024235838A1

Method for double transfer of a layer

N° TW202520351A

Supports for semiconductor structures

N° US2024290615A1

SUBSTRATE COMPRISING A THICK BURIED DIELECTRIC LAYER AND METHOD FOR PREPARING SUCH A SUBSTRATE

N° WO2024251417A1

PROCESS FOR TRANSFERRING A THIN LAYER TO A CARRIER SUBSTRATE

N° WO2025031617A1

Method for preparing a thin layer of ferroelectric material

N° TW202507818A

Substrate comprising a thick buried dielectric layer and method for preparing such a substrate

N° TW202514807A

METHOD FOR PRODUCING A COMPOSITE STRUCTURE FOR MICROELECTRONICS, OPTICS OR OPTOELECTRONICS

N° WO2025073392A1

METHOD FOR PREPARING A THIN LAYER OF FERROELECTRIC MATERIAL

N° WO2024223276A1

METHOD FOR PRODUCING A SILICON CARBIDE SUBSTRATE

N° WO2024200627A1

SYSTEM FOR FRACTURING A PLURALITY OF WAFER ASSEMBLIES

N° US2024222158A1

SUPPORT COMPRENANT UNE COUCHE DE PIEGEAGE DE CHARGES ELECTRIQUES POUR UN SUBSTRAT COMPOSITE ET PROCEDE DE SELECTION D’UN TEL SUPPORT.

N° FR3155628A1

METHOD FOR MANUFACTURING A SUBSTRATE FOR A RADIOFREQUENCY FILTER

N° US2024213944A1

METHOD FOR MANUFACTURING A STRUCTURE COMPRISING A PLURALITY OF BURIED CAVITIES

N° WO2024184336A1

Method for manufacturing a structure comprising a plurality of buried cavities

N° TW202438436A

Method for transferring a sealing layer

N° TW202441599A

TRANSDUCER STRUCTURE FOR ELASTIC WAVE DEVICE

N° JP2024051091A

METHOD FOR TRANSFERRING A SEALING LAYER

N° WO2024193953A1

Surface acoustic wave device on composite substrate

N° US2024250659A1

Carrier comprising a charge-trapping layer, associated composite substrate comprising such a carrier and associated manufacturing process

N° TW202510016A

COMPOSITE STRUCTURE COMPRISING A MONOCRYSTALLINE THIN FILM ON A POLYCRYSTALLINE SILICON CARBIDE SUPPORT SUBSTRATE, AND ASSOCIATED PRODUCTION METHOD

N° WO2024175519A1

METHOD FOR REDUCING THE BORON CONCENTRATION IN A SEMICONDUCTOR LAYER

N° WO2024170757A1

Composite structure comprising a single-crystalline thin film on a poly-crystalline silicon carbide support substrate and associated manufacturing method

N° TW202508048A

METHOD FOR FORMING A WEAKENED ZONE IN A SEMICONDUCTOR SUBSTRATE

N° WO2024170751A1

Procédé de lissage des surfaces libres et rugueuses d’une pluralité de substrats de silicium sur isolant

N° FR3159469A1

Method for forming a weakened zone in a semiconductor substrate

N° TW202449987A

Process for reducing the boron concentration of a semiconductor layer

N° TW202507806A

Surface elastic wave filter with resonant cavities

N° US2024186986A1

Procédé de collage direct entre deux substrats

N° FR3159044A1

Integrated structure comprising a ferroelectric layer with selective polarisation attached to a substrate, and manufacturing method

N° TW202448307A

Procédé de collage direct entre deux substrats

N° FR3159043A1

Procédé de collage direct entre deux substrats

N° FR3159042A1

Integrated Structure attached to a substrate, comprising a ferroelectric layer with selective polarisation in the thickness thereof, and manufacturing method

N° TW202504484A

METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE HAVING AN EPITAXIALLY DEPOSITED LAYER

N° WO2024165817A1

ÉTAPE DE NETTOYAGE D’UN PROCEDE DE FABRICATION D’UN SUBSTRAT, LE PROCEDE COMPRENANT LE REPORT D’UNE COUCHE MINCE MONOCRISTALLINE SUR UN SUPPORT

N° FR3159041A1

Semiconductor structure to form vertical-cavity laser diodes

N° TW202504192A