ALTIS SEMICONDUCTOR

PROCEDE DE FORMATION DE TRANSISTORS PDSOI ET FDSOI SUR UN MEME SUBSTRAT

N° FR3051973A1

RESISTIVE RANDOM ACCESS MEMORY DEVICE

N° EP2955717A1

RESISTIVE RANDOM ACCESS MEMORY DEVICE

N° EP2955718A1

RESISTIVE RANDOM ACCESS MEMORY DEVICE

N° EP2924751A1

DISPOSITIF DE MEMOIRE VIVE RESISTIVE

N° FR3022392A1

DISPOSITIF DE MEMOIRE VIVE RESISTIVE

N° FR3022393A1

DISPOSITIF DE MEMOIRE VIVE RESISTIVE

N° FR3019376A1

Tamper detection arrangement for integrated circuits

N° US2014320151A1

MICROELECTRONIC DEVICE WITH PROGRAMMABLE MEMORY

N° US2014021433A1

MODULE DE SECURITE MATERIEL

N° FR3003712A1

DISPOSITIF MICROELECTRONIQUE A MEMOIRE PROGRAMMABLE

N° FR3003401A1

Protection of an integrated circuit against invasive attacks

N° EP2624296A1

Integrated circuit, has checking module arranged to control sensor or meter so as to deliver measurement representative of physical quantity, where module locks operation of circuit if measurement does not correspond to preset value

N° FR2998695A1

A TAMPER DETECTION ARRANGEMENT

N° WO2014068361A1

A TAMPER DETECTION ARRANGEMENT

N° EP2766929A1

MICROELECTRONIC DEVICE WITH PROGRAMMABLE MEMORY, INCLUDING A LAYER OF DOPED CHALCOGENIDE THAT WITHSTANDS HIGH TEMPERATURES

N° US2013270505A1

Method of manufacturing a structured semi-conductor substrate

N° EP2579321A2

METHOD OF FABRICATING A STRUCTURED SEMICONDUCTOR SUBSTRATE

N° US2013273725A1

Semiconductor substrate comprising doped regions forming a p-n junction

N° EP2551896A1

Semiconductor substrate including doped zones forming P-N junctions

N° US2013026611A1

DISPOSITIF MICROELECTRONIQUE A MEMOIRE PROGRAMMABLE

N° FR2993388A1

Method of fabricating a microelectronic device with programmable memory

N° US2013126813A1

DEVICE AND METHOD FOR FAST MULTIPLICATION

N° WO2012150396A2

Method of treating an oxidized layer of metal nitride

N° US2012228642A1

Treatment process of an oxidized transition metal nitride layer

N° EP2498279A1

PROTECTION D'UN CIRCUIT INTEGRE CONTRE DES ATTAQUES INVASIVES

N° FR2986632A1

Method for etching a microelectronic programmable memory device

N° EP2472624A1

Method of etching a programmable memory microelectronic device

N° US2012168704A1

DISPOSITIF ET PROCEDE DE MULTIPLICATION RAPIDE

N° FR2974917A1

ELECTRONIC MEMORY

N° WO2012069719A2

Microelectronic device for computer, has intermediate layer positioned between electrode and chalcogenide layer, where intermediate layer is layer of metal element with coefficient of thermal conductivity is in specific range

N° FR2981199A1

PROCEDE DE FABRICATION D'UN SUBSTRAT SEMI-CONDUCTEUR STRUCTURE

N° FR2981196A1

SUBSTRAT SEMI-CONDUCTEUR COMPRENANT DES ZONES DOPEES FORMANT UNE JONCTION P-N

N° FR2978614A1

Microelectronic device manufacturing method, involves disseminating metal ions from ionizable metal layer, and depositing electrode on layer of chalcogenide material containing metal ions to form microelectronic device

N° FR2977709A1

Method of fabrication of programmable memory microelectric device

N° US2011297910A1

DISPOSITIF ET PROCEDE DE MULTIPLICATION RAPIDE

N° FR2974916A1

Bias current source for biasing pair of differential CMOS transistors utilized by operational amplifier, has pair of N-type transistors whose gate is connected to one point and another gate is connected to another point

N° FR2973128A1

PROCÉDÉ DE TRAITEMENT D'UNE COUCHE DE NITRURE DE MÉTAL OXYDÉE

N° FR2972563A1

PROCÉDÉ DE GRAVURE D'UN DISPOSITIF MICROÉLECTRONIQUE A MÉMOIRE PROGRAMMABLE

N° FR2970115A1

MEMOIRE ELECTRONIQUE

N° FR2968117A1

UTILISATION D'UN PROCEDE DE DEPOSITION PAR PULVERISATION CATHODIQUE D'UNE COUCHE DE CHALCOGENURE

N° FR2965569A1

PROCEDE DE FABRICATION D'UN DISPOSITIF MICROELECTRONIQUE A MEMOIRE PROGRAMMABLE

N° FR2961018A1