EXAGAN

ELECTRONIC DEVICE PROVIDED WITH A STACK OF TWO HIGH-MOBILITY ELECTRONIC TRANSISTORS ARRANGED IN A HALF-BRIDGE ARM

N° EP4086947A1

Bidirectional device provided with stack of two high electron mobility transistors connected end to end

N° CN115207080A

Electronic device

N° CN218274605U

BI-DIRECTIONAL DEVICE PROVIDED WITH A STACK OF TWO HIGH ELECTRON MOBILITY TRANSISTORS CONNECTED HEAD-TO-TAIL

N° EP4075515A1

Electronic device and structure

N° CN218896636U

ELECTRONIC COMPONENT AND ELECTRONIC STRUCTURE

N° CN218957734U

Electronic component provided with plurality of high electron mobility transistors

N° CN115206964A

Electronic device comprising two high electron mobility transistors

N° CN115206965A

ELECTRONIC DEVICE COMPRISING TWO TRANSISTORS WITH HIGH ELECTRONIC MOBILITY

N° EP4071829A1

ELECTRONIC ASSEMBLY PROVIDED WITH A PLURALITY OF HIGH ELECTRON MOBILITY TRANSISTORS

N° US2022328681A1

ELECTRONIC DEVICE COMPRISING TWO HIGH ELECTRON MOBILITY TRANSISTORS

N° EP4068359A1

ELECTRONIC DEVICE COMPRISING TWO HIGH ELECTRON MOBILITY TRANSISTORS

N° US2022320325A1

Method of manufacturing electronic component assembly on front surface of semiconductor wafer

N° CN116348818A

METHOD FOR MANUFACTURING A SET OF ELECTRONIC COMPONENTS ON THE FRONT OF A SEMICONDUCTOR SUBSTRATE

N° US2023408902A1

METHOD FOR PRODUCING AN ELECTRONIC COMPONENT ASSEMBLY ON THE FRONT FACE OF A SEMI-CONDUCTOR WAFER

N° US2023378085A1

VERFAHREN ZUR HERSTELLUNG EINES SATZES VON ELEKTRONISCHEN KOMPONENTEN AUF DER VORDERSEITE EINES HALBLEITERSUBSTRATS

N° DE112021005457T5

Verfahren zur Herstellung einer elektronischen Bauteilbaugruppe auf der Vorderseite eines Halbleiterwafers

N° DE112021005458T5

METHOD FOR PRODUCING AN ELECTRONIC COMPONENT ASSEMBLY ON THE FRONT FACE OF A SEMI-CONDUCTOR WAFER

N° WO2022079399A1

Method of manufacturing assembly of electronic components on front surface of semiconductor substrate

N° CN116348819A

METHOD FOR MANUFACTURING A SET OF ELECTRONIC COMPONENTS ON THE FRONT FACE OF A SEMI-CONDUCTOR SUBSTRATE

N° WO2022079400A1

TRANSISTOR WITH INTERDIGITAL ELECTRODES, COMPRISING A GATE TERMINAL CONNECTED BY A PLURALITY OF VERTICAL VIAS TO THE GATE ELECTRODES

N° EP4173033A1

TRANSISTOR WITH INTERDIGITAL ELECTRODES, COMPRISING A GATE TERMINAL CONNECTED BY A PLURALITY OF VERTICAL VIAS TO THE GATE ELECTRODES

N° WO2022003265A1

TRANSISTOR WITH INTERDIGIT ELECTRODES, COMPRISING A GATE TERMINAL CONNECTED BY A PLURALITY OF VERTICAL VIAS TO THE GATE ELECTRODES

N° US2023253401A1

Dispositif électronique pourvu d’un empilement de deux transistors à haute mobilité électronique agencés en demi-bras de pont

N° FR3122771A1

DISPOSITIF BIDIRECTIONNEL POURVU D’UN EMPILEMENT DE DEUX TRANSISTORS A HAUTE MOBILITE ELECTRONIQUE CONNECTES TETE-BECHE

N° FR3122036A1

DISPOSITIF ELECTRONIQUE COMPRENANT DEUX TRANSISTORS A HAUTE MOBILITE ELECTRONIQUE

N° FR3121782A1

ASSEMBLAGE ELECTRONIQUE POURVU D’UNE PLURALITE DE TRANSISTORS A HAUTE MOBILITE ELECTRONIQUE

N° FR3121781A1

Dispositif électronique comprenant de deux transistors à haute mobilité électronique

N° FR3121549A1

PROCEDE DE FABRICATION D’UN ENSEMBLE DE COMPOSANTS ELECTRONIQUES SUR LA FACE AVANT D’UN SUBSTRAT SEMI-CONDUCTEUR

N° FR3115396A1

PROCEDE DE FABRICATION D’UN ENSEMBLE DE COMPOSANTS ELECTRONIQUES SUR LA FACE AVANT D’UNE PLAQUE SEMI-CONDUCTRICE

N° FR3115397A1

TRANSISTOR A ELECTRODES INTERDIGITEES, COMPRENANT UN TERMINAL DE GRILLE CONNECTE PAR UNE PLURALITE DE VIAS VERTICAUX AUX ELECTRODES DE GRILLE

N° FR3112025A1

TRANSISTOR WITH HIGH ELECTRON MOBILITY

N° WO2020035644A1

SELF-POWERED SWITCHING DEVICE AND METHOD FOR OPERATING SUCH A DEVICE

N° WO2019229341A1

HALF-BRIDGE ELECTRONIC DEVICE COMPRISING TWO SYSTEMS FOR OPTIMISING DEAD-TIME BETWEEN THE SWITCHING OPERATIONS OF A HIGH LEVEL SWITCH AND OF A LOW LEVEL SWITCH

N° WO2019224451A1

HALF-BRIDGE ELECTRONIC DEVICE COMPRISING TWO SYSTEMS FOR OPTIMISING DEAD-TIME BETWEEN THE SWITCHING OPERATIONS OF A HIGH LEVEL SWITCH AND OF A LOW LEVEL SWITCH

N° EP3797471A1

ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR

N° WO2019224448A1

Dispositif d’inspection visuelle pour identifier la présence de défauts sur la face avant d’un substrat

N° FR3095295A1

SELF-POWERED SWITCHING DEVICE AND OPERATING METHOD FOR SUCH A DEVICE

N° WO2019115913A1

SELF-POWERED SWITCHING DEVICE AND OPERATING METHOD FOR SUCH A DEVICE

N° US2020328730A1

SELF-POWERED SWITCHING DEVICE AND OPERATING METHOD FOR SUCH A DEVICE

N° EP3724980A1

자체 전원 스위칭 디바이스 및 이러한 디바이스 동작을 위한 방법

N° KR20200097725A

Self-powered switching device and operating method for such device

N° CN111713001A

PROCEDE DE TEST DE FIABILITE D'UN COMPOSANT ELECTRONIQUE

N° FR3085485A1

TRANSISTOR A HAUTE MOBILITE ELECTRONIQUE

N° FR3084966A1

DISPOSITIF DE COMMUTATION AUTOALIMENTE ET PROCEDE DE FONCTIONNEMENT D'UN TEL DISPOSITIF

N° FR3082076A1

DISPOSITIF ELECTRONIQUE EN DEMI-PONT COMPRENANT DEUX SYSTEMES POUR L'OPTIMISATION DES TEMPS MORTS ENTRE LES COMMUTATIONS D'UN INTERRUPTEUR NIVEAU HAUT ET D'UN INTERRUPTEUR NIVEAU BAS

N° FR3081633A1

TRANSISTOR A HAUTE MOBILITE ELECTRONIQUE EN MODE ENRICHISSEMENT

N° FR3081613A1

Half-bridge electronic device comprising two systems for minimizing dead-time between the switching operations of a high level switch and of a low level switch

N° US2020403508A1

HALF-BRIDGE ELECTRONIC DEVICE COMPRISING TWO SYSTEMS FOR MINIMISING DEAD-TIME BETWEEN THE SWITCHING OPERATIONS OF A HIGH LEVEL SWITCH AND OF A LOW LEVEL SWITCH

N° WO2019012192A1

TRANSISTOR A HAUTE MOBILITE ELECTRONIQUE EN MODE ENRICHISSEMENT

N° FR3078198A1

DISPOSITIF DE COMMUTATION AUTOALIMENTE ET PROCEDE DE FONCTIONNEMENT D'UN TEL DISPOSITIF

N° FR3075508A1

전원 회로 스위칭 디바이스

N° KR20190086714A

수동 보호 회로를 갖는 전원 회로 스위칭 디바이스

N° KR20190087472A

POWER CIRCUIT SWITCHING DEVICE HAVING A PASSIVE PROTECTION CIRCUIT

N° EP3545622A1

POWER CIRCUIT SWITCHING DEVICE

N° WO2018096265A1

POWER CIRCUIT SWITCHING DEVICE HAVING A PASSIVE PROTECTION CIRCUIT

N° WO2018096263A1

Power circuit switching device

N° US2019393875A1

Power circuit switching device having a passive protection circuit

N° US2020295743A1

SWITCHING DEVICE OF A POWER CIRCUIT

N° EP3545621A1

INTEGRATED CIRCUIT FORMED BY TWO CHIPS THAT ARE CONNECTED IN SERIES

N° WO2018091852A1

Integrated circuit formed from a stack of two series-connected chips

N° US2019378823A1

2개의 직렬-연결된 칩들의 스택으로 형성된 집적 회로

N° KR20190082892A

INTEGRATED CIRCUIT FORMED FROM A STACK OF TWO SERIES-CONNECTED CHIPS

N° WO2018096245A1

INTEGRATED CIRCUIT FORMED FROM A STACK OF TWO SERIES-CONNECTED CHIPS

N° EP3545551A1

DISPOSITIF ELECTRONIQUE EN DEMI-PONT COMPRENANT DEUX SYSTEMES POUR LA MINIMISATION DES TEMPS MORTS ENTRE LES COMMUTATIONS D'UN INTERRUPTEUR NIVEAU HAUT ET D'UN INTERRUPTEUR NIVEAU BAS.

N° FR3068844A1

MONOLITHICALLY INTEGRATED CASCODE DEVICE

N° WO2018007711A1

Integrated circuit comprising a chip formed by a high-voltage transistor and comprising a chip formed by a low-voltage transistor

N° US2019279948A1

INTEGRATED CIRCUIT COMPRISING A CHIP FORMED BY A HIGH-VOLTAGE TRANSISTOR AND COMPRISING A CHIP FORMED BY A LOW-VOLTAGE TRANSISTOR

N° WO2017203186A1

INTEGRATED CIRCUIT COMPRISING A PLURALITY OF CHIPS FORMED BY A HIGH-VOLTAGE TRANSISTOR AND COMPRISING A CHIP FORMED BY A LOW-VOLTAGE TRANSISTOR

N° WO2017203187A1

HIGH-ELECTRON-MOBILITY DEVICE WITH INTEGRATED PASSIVE ELEMENTS

N° WO2017203185A1

DEVICE WITH SEGMENTED FIELD PLATES

N° WO2017182739A1

SEMICONDUCTOR STRUCTURE COMPRISING III-N MATERIAL

N° EP3440692A1

SEMICONDUCTOR STRUCTURE COMPRISING III-N MATERIAL

N° WO2017174885A1

Semiconductor structure comprising III-N material

N° US2020185515A1

III-N 재료를 포함하는 반도체 구조

N° KR20180134928A

PROCEDE ET CIRCUIT DE COMMANDE D'UN DISPOSITIF DE COMMUTATION D'UN CIRCUIT DE PUISSANCE

N° FR3059498A1

DISPOSITIF DE COMMUTATION D'UN CIRCUIT DE PUISSANCE PRESENTANT UN CIRCUIT PASSIF DE PROTECTION

N° FR3059490A1

PROCEDE ET CIRCUIT DE COMMANDE D'UN DISPOSITIF DE COMMUTATION D'UN CIRCUIT DE PUISSANCE

N° FR3059497A1

CIRCUIT INTEGRE FORME D'UN EMPILEMENT DE DEUX PUCES CONNECTEES EN SERIE

N° FR3059155A1

CIRCUIT INTEGRE FORME DE DEUX PUCES CONNECTEES EN SERIE

N° FR3059154A1

CIRCUIT INTEGRE COMPRENANT UNE PUCE FORMEE D'UN TRANSISTOR A HAUTE TENSION ET COMPRENANT UNE PUCE FORMEE D'UN TRANSISTOR A BASSE TENSION

N° FR3053833A1

DISPOSITIF CASCODE INTEGRE MONOLITHIQUEMENT

N° FR3053835A1

DISPOSITIF A HAUTE MOBILITE ELECTRONIQUE AVEC ELEMENTS PASSIFS INTEGRES

N° FR3051977A1

CIRCUIT INTEGRE CASCODE

N° FR3051978A1

DISPOSITIF AVEC PLAQUES DE CHAMP SEGMENTEES

N° FR3050573A1

STRUCTURE SEMI-CONDUCTRICE A BASE DE MATERIAU III-N

N° FR3049762A1