ANTAIOS

SOT-MRAM MEMORY COMPRISING A CURRENT ASYMMETRY-CORRECTING MEANS

N° WO2024240670A1

MAGNETIC MEMORY CELL BASED ON STT-ASSISTED SOT WRITING COMPRISING AN N-TYPE TRANSISTOR AND A P-TYPE TRANSISTOR AS SELECT TRANSISTORS, AND MRAM MEMORY

N° WO2024189096A1

MAGNETO RESISTIVE MEMORY DEVICE

N° WO2023135019A1

MAGNETO RESISTIVE MEMORY DEVICE

N° EP4210058A1

MAGNETIC MEMORY DEVICE COMPRISING A CURRENT PULSE GENERATOR, AND METHOD OF OPERATING SUCH A MAGNETIC MEMORY DEVICE

N° EP4141871A1

Magnetoresistive element comprising discontinuous interconnect segments and magnetic memory comprising a plurality of the magnetoresistive element

N° KR20210116349A

MAGNETORESISTIVE ELEMENT COMPRISING DISCONTINUOUS INTERCONNECT SEGMENTS AND MAGNETIC MEMORY COMPRISING A PLURALITY OF THE MAGNETORESISTIVE ELEMENTS

N° CN113410380A

MAGNETO RESISTIVE MEMORY DEVICE

N° CN114049906A

Magneto resistive memory device

N° US2022029088A1

SOT MRAM CELL AND ARRAY COMPRISING A PLURALITY OF SOT MRAM CELLS

N° CN113160863A

SOT MRAM SOT MRAM SOT MRAM cell and array comprising a plurality of SOT MRAM cells

N° KR20210089076A

SOT MRAM cell and array comprising a plurality of SOT MRAM cells

N° US2021210127A1

MAGNETO RESISTIVE MEMORY DEVICE WITH THERMALLY ASSISTED OPERATIONS

N° EP4016530A1

MAGNETIC RANDOM ACCESS MEMORY CELL AND METHOD FOR WRITING AND READING SUCH MEMORY ELEMENT

N° EP3996093A1

Magnetic Memory Cell Having Deterministic Switching and High Data Retention

N° KR20220059069A

MAGNETIC RANDOM ACCESS MEMORY CELL COMPRISING A FERRIMAGNETIC FREE LAYER

N° EP3975184A1

MAGNETO RESISTIVE MEMORY DEVICE

N° EP3945609A1

MAGNETIC RANDOM ACCESS MEMORY CELL AND METHOD FOR READING SAID CELL

N° EP3945521A1

MAGNETIC MEMORY ELEMENT HAVING DETERMINISTIC SWITCHING AND METHOD FOR WRITING SUCH MAGNETIC MEMORY ELEMENT

N° EP3916729A1

Magnetic memory cell having deterministic switching and high data retention

N° US2020357982A1

MAGNETORESISTIVE ELEMENT COMPRISING DISCONTINUOUS INTERCONNECT SEGMENTS AND MAGNETIC MEMORY COMPRISING A PLURALITY OF THE MAGNETORESISTIVE ELEMENT

N° EP3882995A1

MAGNETIC MEMORY CELL WRITABLE IN A DETERMINISTIC FASHION AND METHOD FOR MANUFACTURING SUCH CELL

N° EP3866168A1

MAGNETORESISTIVE MEMORY CELL HAVING DETERMINISTIC SWITCHING AND IMPROVED ENERGY EFFICIENCY

N° EP3863015A1

SOT MRAM CELL AND ARRAY COMPRISING A PLURALITY OF SOT MRAM CELLS

N° EP3848933A1

MAGNETIC MEMORY CELL HAVING DETERMINISTIC SWITCHING AND HIGH DATA RETENTION

N° EP3736812A1